|journal||J. Mater. Chem. C, 2016,4, 7999-8005(DOI: 10.1039/C6TC02851A)|
Low-voltage organic field-effect transistors (OFETs) and complementary metal oxide semiconductor (CMOS) inverters based on pentacene and N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13) were fabricated on HfTiOx gate dielectrics. Both pristine dielectrics and substrates passivated with self-assembled monolayers (SAMs) of n-dodecylphosphonic acid (PA-C12) were employed. The high capacitance and low leakage current of the HfTiOx-based dielectrics enabled the devices to operate at |V| < 3 V. Passivation with PA-C12 was highly effective in improving the device characteristics. In particular, an electron mobility of 0.72 cm2 V−1 s−1 was measured for the device fabricated with the passivated HfTiOx dielectric, which represents the best performance reported to date for perylene-based OFETs prepared with thin, high-k gate dielectrics. The CMOS inverters exhibited fast switching and high gain characteristics, which were attributed to good coupling between the optimized p- and n-type OFETs.
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