Yun Chang Choi(최윤창, 제1저자)
Gallium nitride (GaN) has been of interest due to its enormous potentials for optoelectronic devices. However, it is very interesting that no proper bottom-up chemical synthesis method for GaN quantum dot has been proposed. Here, we first present a new synthetic method for GaN colloidal quantum dots based on the hot-injection technique. Strikingly, it was possible to demonstrate the change in the emission energy of GaN CQDs by adjusting their reaction condition, which directly shows the existence of quantum confinement effects in colloidal GaN CQDs. Furthermore, the ultraviolet emission of colloidal GaN CQDs has been lowered to the blue region by introducing Zn metal impurities, which has never been observed in the colloidal nitride nanocrystal system. The origin of blue emission was studied with time-resolved photoluminescence (TRPL). This GaN CQD study would provide a new perspective on Ⅲ-Ⅴ colloidal nanocrystal system, and basis for optoelectronic applications of colloidal quantum dots.
https://pubs.acs.org/doi/10.1021/acs.chemmater.8b05193
